Heteroepitaxial Si-, Ge-, and Gaas-On-Insulator Structures on Si Substrates by Use of Fluoride Insulators

Abstract

ABSTRACTHeteroepitaxial growth of alkaline earth fluoride films on Si substrates and Si, Ge, and GaAs films on the fluoride/Si structures, is reviewed. Growth of single crystalline fluoride films on Si is first discussed. Then the usefulness of novel heteroepitaxial technologies, the predeposition method and the electron beam irradiation method, is demonstrated in the growth of Si and Ge films on CaF2/Si structures. Finally fundamental growth characteristics of GaAs films on CaF2/Si structures and annealing effects on the crystallinity of the GaAs films are described.