Abstract
0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 (PMN-PT) relaxor ferroelectric thin films have been grown on MgO single crystal and MgO/TiN buffered Si by pulsed laser deposition method. Structural characterization is performed by four-circle mode X-ray diffractometry. The effects of substrate temperature, deposition ambient oxygen pressure and postannealing on the crystallinity of the PMN-PT films are studied in details. Optimum condition for fabricating high structural quality and pyrochlore-free PMN-PT films is identified. Electrical measurements on the epitaxial PMN-PT films are performed with lattice matched conducting LaSrMnO3 (LSMO) bottom electrode and Au top electrode. Heteroepitaxial relationship of PMN-PT(100)||LSMO(100)||MgO(100) and PMN-PT(100)||LSMO(100)||MgO(100)||TiN(100)||Si(100) are obtained. The potential uses of PMN-PT films in integrated devices are discussed.
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