Abstract
Ferroelectric field effect transistor (FeFET) has shown great potential in nonvolatile ferroelectric random access memory (NVFRAM) applications. In the present study, we have fabricated an all-perovskite FeFET on (001) LaAlO3 (LAO) by pulsed laser deposition method. The perovskites used for the ferroelectric gate and the semiconducting channel are Pb(Zr0.52Ti0.48)O3 (PZT) and LaSrMnO3 (LSMO) respectively. X-ray diffraction studies in both the Bragg-Brentano and four-circle modes reveal high quality heteroepitaxy in the PZT/LSMO/LAO structures. Optimum channel modulation is obtained by matching the carrier density of the LSMO films with the induced charges at the interface by the ferroelectric PZT layer. This is achieved by controlling the oxygen content of the LSMO during deposition at various ambient oxygen pressures. High thermal stability of the LSMO films against post-deposition heat treatments is demonstrated. Results of the structural and electrical characterizations of the epitaxial PZT/LSMO deposited on MgO/TiN buffered Si for integrated device applications are described.
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