Abstract
Ⅲ–Ⅴ semiconductor compound InSb with a zinc blende structure and extremely high electron mobility was grown as a thin film on SrTiO3 (STO)(001) substrate by pulsed laser deposition. The growth of (111) oriented InSb was observed despite a large lattice mismatch of 1.6% ([1−10]InSb ∣∣ [010]STO) and 17.8% ([11−2]InSb ∣∣ [100]STO). Electron mobility of 94 cm2 V−1s−1 at room temperature was confirmed by Hall effect measurement and the magnetic field reversal down to 1 Oe was detected. Growth of InSb/STO (001) thin film could be a promising approach for the detection of magnetic signals from various perovskite type functional oxide materials and will find applications in future devices.
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