Abstract
Abstract Epitaxial TiZrN films were successfully grown on Si (100) substrates at high temperature by using DC magnetron reactive sputtering with a Ti0.68Zr0.32 alloy target. Annealing of a grown TiZrN/Si specimen was performed by applying microwave plasma with a gas mixture of N2 and H2 to improve the film quality. The X-ray rocking curve (XRC) width of (200)TiZrN reflection can reach a minimum value of 1.18°. The heteroepitaxial relationship of TiZrN with Si is {001}TiZrN//{001}Si and TiZrN// Si. The (200)TiZrN XRC width of a 20 nm-thick TiZrN film reduces from 1.99° to 0.85° by microwave plasma annealing. As a result of the improvement of the film quality, the annealed film exhibits a much lower resistivity (28 μΩ‧cm) than that of the as-deposited one (44 μΩ‧cm). The surface morphologies of the TiZrN films are smooth with the surface roughness in the range of 1–2 nm.
Published Version
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