Abstract
Scandium aluminum nitride alloy (ScAlN) thin films were prepared using DC reactive magnetron sputtering with a scandium aluminum alloy (Sc0.06Al0.94) target on n-type silicon substrates. We have investigated the influence of N2/Ar-flow ratio on the crystalline structure, the surface morphology and the electrical properties of ScAlN thin films. Consequently, it was statistically proved that the N2/Ar-flow ratio was an important control factor in the process of sputtering. According to the peak intensities in θ/2θ scans and rocking curve FWHM measurements of the (002) peaks, the crystalline quality of ScAlN thin film first increased and then decreased, reaching the best crystalline state at a N2/Ar-flow ratio of 3.3:7. The best surface morphology of ScAlN thin film was obtained at N2/Ar-flow ratios of 3.2:7, 3.3:7 and 3.4:7 and the surface roughness reached a minimum of 2.612nm at 3.3:7. The resistivity and dielectric constant first increased to maximum values of 3.35×1012Ωcm and 13.6, and then decreased with the ratio increasing. Moreover, ScAlN thin film exhibited a higher value of resistivity and dielectric constant when compared with un-doped AlN thin film. In addition, when the N2/Ar-flow ratio was 3.3:7, the highest breakdown field strength and lowest leakage current were obtained, with values 1.12MV/cm and 3×10−8A, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
