Abstract
A novel model for the I = I( V) and Qs = Qs( I) characteristics of narrow base pin diodes is developed. For the first time, heavy-doping effects are taken into consideration leading to a remarkable agreement (within 10%) with experiments carried out on S, X and K-band step-recovery diodes. Accordingly, the stored charge becomes an accurately predictable parameter. This paper also contributes to the better understanding of heavy-doping parameters in p + silicon such as deriving new values for minority electron mobility and analysing the recombination effects on the I–V characteristics of transparent and quasi-transparent p + emitters. Somewhat surprisingly, even for 1.5 μm emitters, the transparent emitter model appears to provide better correlation with experiments than the quasi-transparent emitter one. It is found that improvement of the latter model's agreement with experiment asks for lower Auger coefficient values ( Cp) than currently available ones.
Published Version
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