Abstract
Abstract Indium oxide and indium tin oxide, films suitable for heat mirror applications, have previously been produced by a variety of methods which include sputtering, chemical vapour deposition, gas phase hydrolysis or spraying. We report for the first time the production of these materials by the photolysis of thin films of vacuum-evaporated indium tin triiodide In x Sn 1− x I 3 0·5 ⩽ χ ⩽1) in air at relatively low temperatures (100–150°C). The determined electrical, optical and crystallographic properties of the prepared films were observed to be comparable to those prepared by other methods. Attempts have been made to epitomize preparative conditions that give films with enhanced heat minor properties. Such a film prepared from In 0·9 Sn 0·1 I 3 , with a thickneess of 0·65 μm, has a transmittance of about 90% and sheet resistance of 16 Ω◊ −1
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