Hartree calculations for n-inversion layers on stressed silicon surfaces

Abstract

The energy splittings and occupation number densities in n-type inversion layers are estimated in a Hartree calculation with a parametrized exponential potential. Good agreement with experiment is obtained for low temperatures and for electron concentrations 1×10 12cm −2 ⩽ N s ⩽1×10 13 cm −2. On the basis of these calculations the influence of uniaxial stress is considered. For a 001-stress along a (100)-surface one finds that (i) the stress induced subband splitting is a function of the electron density, and (ii) the splitting E 1- E 0 within a subband system depends on the applied stress.