Abstract

Layered MoS 2 film was formed on a SiO 2 substrate by sputtering and Al 2 O 3 film was deposited as passivation film on the MoS 2 film, an annealing was performed in sulfur atmosphere in order to compensate sulfur defects and improve crystallinity. By annealing MoS 2 film in sulfur atmosphere, crystallinity was improved by sulfur compensation even through Al 2 O 3 film, and Hall-effect mobility of the MoS 2 film increased than that prior to annealing. The high Hall-effect mobility values of 300 and 100 cm2 V-1s-1 were remarkably achieved without and with 3-nm passivation film, respectively.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call