Abstract
An aluminum oxide (Al2O3) passivation film that prevents the oxidation of a sputtered and sulfurized molybdenum disulfide (MoS2) film was investigated for an enhancement of the Hall-effect mobility. A remarkably high Hall-effect electron mobility value of 100 cm2 V−1 s−1 was achieved using 3 nm passivation film, as compared to 25 cm2 V−1 s−1 for an as-deposited MoS2 film, because sulfurization is able to be yielded even through the Al2O3 film into the MoS2 film.
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