Hall Effect and Resistivity Characterization of Doped, Electrodeposited CdSe

Abstract

Doped thin films were electrodeposited onto indium‐tin oxide (ITO) substrates that were pretreated with a thin layer of Se, Cd, or In. Hall effect and resistivity measurements were performed to determine the effects of doping on the resistivity, carrier concentration, and carrier mobility. The data varied in a systematic fashion that correlated with the substrate treatment and doping procedures. Carrier concentrations ranged from 1019 to 109 cm−3, and the electrical resistivities were measured in the range of . Hall effect mobilities were in the range of 1–50 cm2/Vs. As doping levels increased, both resistivity and mobility decreased. Samples deposited on vapor treated ITO showed consistently high resistivities and moderate mobility values. When electrochemical treatments of ITO were used, the properties varied systematically with the amount of Cd or In electrodeposited, exhibiting resistivities in the lower range and carrier densities in the higher range. The temperature dependent resistivity and Hall effect data were analyzed using the Seto‐Baccarani model for polycrystalline semiconductors. This model assumes that the dominant transport mechanism is thermionic emission of carriers over the potential barriers that form at the intercrystalline grain boundaries.