Hall-effect characterization of III–V nitride semiconductors for high efficiency light emitting diodes

Abstract

Variable-temperature Hall-effect measurements were employed to optimize doping for GaN layers utilized in blue, blue-green and green light emitting diodes (LEDs). N-type doping was accomplished by doping with Si, Ge, and O, and the electronic properties of these donors were studied. Si and Ge, which substitute for Ga, are shallow donors with almost identical activation energies for ionization (ca. 17 and ca. 19 meV, respectively, for a donor concentration of ca. 3×10 17 cm −3). O substitutes for N and introduces a slightly deeper donor level into the bandgap of GaN having an activation energy of ca. 29 meV (for a donor concentration of ca. 1×10 18 cm −3). Mg doping was employed to achieve p-type conductivity for GaN device layers. Mg substitutes for Ga introducing a relatively deep acceptor level. For the analysis of the variable-temperature Hall-effect data, it was found important to take the coulomb interaction between ionized acceptors into account, leading to lower activation energy with increasing degree of ionization (increasing temperature). The activation energy for ionization of Mg acceptors in GaN was thus estimated to be (208±6) meV for very low acceptor concentrations. Using optimized nitride layers, LEDs with typical external quantum efficiencies of ca. 10% in the blue and blue-green, and ca. 8% in the green wavelength range were achieved. Due to optimized doping, the forward voltages for these diodes were as low as 3.2 V at 20 mA drive current.