Abstract
Mg acceptors in GaN epitaxial layers grown by metal–organic vapour-phase epitaxy were investigated by optically detected magnetic resonance (ODMR) spectroscopy. The magnetic resonances were detected on the magnetic circular dichroism (MCD) of the acceptor bound exciton (Mg0X) in the near bandgap region, and in the infrared spectral range on the MCD of the hole ionisation transition Mg0+hν→Mg−+hVB. The observed g-values of the Mg0 acceptors range for g|| from 2.102 to 2.065 and for g⊥ from 1.94 to 2.00, respectively. These variations depend on the Mg doping concentration.
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