Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition

Abstract

The effects of the deliberate hydrogenation of GaN were investigated for heteroepitaxial layers grown by metalorganic chemical vapor deposition. The GaN layers were either Mg-doped, p-type after thermal activation, or Si-doped, n type. Elemental depth profiles from secondary ion mass spectroscopy reveal a striking contrast after a deuteration at 600 °C: the deuterium concentration in Mg-doped GaN is ∼1019 cm−3 while there is no detectable deuterium incorporation in the n-type material. Variable temperature Hall effect measurements provide the most direct evidence to date for Mg–H complex formation with the decrease in the hole concentration upon hydrogenation accompanied by an increase in the hole Hall mobility.