Abstract
This paper describes the electrical properties of hafnium-/ n-type/silicon contacts. These contacts were found to be Schottky barriers with a low barrier height. Polished and chemically cleaned 〈111〉 silicon wafers with a donor concentration N d = 7 × 10 22 m −3 were used to fabricate experimental Schottky barrier structures. For the Schottky barrier height φ bn and the ideality factor n values were found of 0.47 V and 1.07–1.11, respectively. It is concluded that due to their low forward voltage drop and good rectifying properties, Hf- nSi contacts can be applied in microwave Schottky barrier diodes.
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