Growth temperature-dependent conduction-type inversion of C-doped InGaAs grown by chemical beam epitaxy

Abstract

We report for the first time on the growth temperature-dependent conduction-type transition of carbon-doped InGaAs grown by chemical beam epitaxy (CBE) using triethylgallium (TEGa), trimethylindium (TMIn), precracked arsine (AsH3), and unprecracked monoethylarsine (MEAs). The hole concentration of InGaAs layers decreased with increasing growth temperature and conductivity changed from p to n at around 450°C. The conduction-type inversion of InGaAs layer is attributed to the surface segregation of indium and decomposition and incorporation kinetics of group-III source materials on the surface depending on the growth temperatures. The variations of indium composition and the VIII ratio did not affect the growth temperature-dependent conduction-type inversion of carbon-doped InGaAs. This behavior is attributed to the effect of surface segregation of indium on the carbon incorporation during the growth of InGaAs.