Abstract
p-type carbon-doped InGaAs on GaAs(100) was successfully grown by chemical beam epitaxy (CBE) using triethylgallium (TEGa), trimethylindium (TMIn), and unprecracked monoethylarsine (MEAs) even though it has been known that p-type conduction can be difficult to obtain when TMIn is used as a carbon auto-doping source. The carrier concentration was strongly affected by growth temperature and TMIn beam flux. The hole concentration decreased with increasing growth temperature and a conductivity inversion from p- to n-type was observed around 450°C. The indium composition of CBE-grown InGaAs using unprecracked MEAs was fairly insensitive to the growth temperatures ranging from 340 to 540°C. The photoluminescence (PL) response in the relaxed InGaAs GaAs layer was not degraded even at the low growth temperature compared to those grown by molecular beam epitaxy (MBE). Our results showed that TMIn and unprecracked MEAs can be used as carbon auto-doping precursors in the CBE growth of p-type InGaAs.
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