Abstract
An initial growth stage of InGaAs on (100) GaAs using gaseous sources of triethylgallium (TEG), trimethylindium (TMI), and arsine has been studied through reflection high-energy electron diffraction intensity oscillations. The growth rate of InGaAs gradually decreased with proceeding growth. The decreasing growth rate had strong dependencies on the growth temperature and the AsH 3 flow rate. At a growth temperature of 570° C, a 50% reduction of the growth rate was observed after the growth of eight monolayers of InGaAs. These phenomena are attributed to indium surface segregation, by which the decomposition and /or desorption kinetics of gallium compound gases (diethylgallium, TEG, etc.) are strongly affected.
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