Abstract
In this article, we report a study of incorporation behavior of the phosphorus in GaAs1−xPx during gas-source molecular beam epitaxial growth under various experimental conditions. The phosphorus composition in GaAsP was found to be generally different from the phosphine flow-rate fraction in the gas phase, and it is independent of the V/III incorporation ratio. This composition, however, agrees with the group-V-induced reflection high-energy electron diffraction oscillation determination. An increase of the phosphorus composition occurs at the substrate temperature region between 520 and 620 °C, attributable to different desorption kinetics of As and P. The same phosphorus incorporation into GaAsP under different strain states was found when the GaAsP layer was pseudomorphically grown on GaAs and GaP substrates.
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