Abstract
The present study demonstrates that high optical-quality crystals of mercurous chloride can be grown by the physical vapor transport (PVT) method when growth conditions are carefully controlled. Growth rates were measured at a fixed temperature gradient in a two-zone transparent furnace, where growth was abruptly disturbed and then re-establishment of equilibrium was allowed. During this process the crystal length was measured as a function of time. Data were taken for crystal orientations between [001] and [110], growth along [001] being faster than along the [110] orientation. Experimental data follow with the equation l t = l e− A exp(- t/τ), where l t is the length of crystal at any time t, l e is the equilibrium length, and A and τ are constants. Results indicate that growth is controlled by surface kinetics. Growth defects such as inclusions, nonstoichiometry, cracking, cleavage, growth rings, and striations were observed in crystals of medium purity. Low defect densities were achieved by control of crystal purity, growth rate, and orientation.
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