Abstract
The results of an investigation of the growth of GeS single crystals from the vapor in the conical part of a closed ampoule are reported. The growth was forced by abrupt displacements of the ampoule through a fixed temperature gradient. The re-establishment of equilibrium was observed. The deviation from the final equilibrium length could be described by an exponential dependence on time. The total change of the crystal length was greater than the sudden displacement. The relaxation time increased linearly with the crystal length. The governing equation k(l) dl/dt+l=d 1+R ∗vt is deduced from the measurements, where k is the relaxation time, l the crystal length, t the time, d 1 the initial displacement for seeding and v the constant drive rate. The constant factor R ∗⪆1 accounts for the change of the temperature distribution by the presence of the crystal. A linear solution of the equation exists for k( l)= a+ bl, where a and b are constants.
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