Abstract
The growth of Bi 2Se 3 thin films by metalorganic chemical vapour deposition (MOCVD) using Trimethylbismuth (TMBi) and a novel Se-precursor: Ditertiarybutylselenide (DTBSe) as bismuth and selenium sources, respectively, is investigated on pyrex substrates. The effect of the growth parameters such as substrate temperature, T g, and TMBi partial pressure, P TMBi, on the structural, electrical and thermoelectrical properties for the following growth conditions: 440°C⩽ T g⩽475°C, 0.5×10 −4 atm⩽ P TMBi⩽1×10 −4 atm and a total hydrogen flow rate D T=3 l/mn, of Bi 2Se 3 films has been investigated. The crystallinity versus growth condition ( T g, P TMBi) using X-ray diffraction was studied and a typical preferential c-orientation was observed. Thus, these layers always displayed n-type conduction using Hall effect measurement. The best electric and thermoelectric characteristics under the optimal growth conditions have been found; μ>250 cm 2/V s, ρ⩽11.8 μΩ m and α=–163.7 μV/K Then, These initial results suggest a significant potential for the MOCVD method to produce good thermoelectrical materials using DTBSe as Se-precursor.
Published Version
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