Abstract
ZnSe/ZnMgSSe quantum well (QW) structures with an abrupt heterointerface have successfully been grown on [100]-oriented GaAs substrates by metalorganic molecular beam epitaxy (MOMBE) under in situ observation of reflection high energy electron diffraction (RHEED). Source materials used were elemental zinc (Zn), selenium (Se), the RHEED specular spot were observed over 10 cycles during the growth of ZnSe well and ZnMgSSe barrier layers. A series of single quantum wells (SQWs) with various well widths were grown and characterized by photoluminescence (PL) measurements at 4.2 K. SQWs with 24 and 33 Å well widths exhibited sharp intense emissions which originated from n=1 heavy-hole free excitons.
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