<title>Gas source molecular beam epitaxy (MBE) of ZnMgSSe layers</title>

Abstract

ABSTRACT Gas-source molecular beam epitaxy (GSMBE) was applied for the growth of ZnMgSSe layers and quantum well(QW) structures. The source materials were elemental Zn and Se, as well as gas sources of bis-methylcyclopentadienyl-magnesium ((MeCp)2Mg) and H2S. Mg and S compositions were well controlled by the flow rate of (MeCp)2Mg and H2S, respectively. ZnSe/ZnMgSSe QWs with abrupt heterointerface have successfully been grown on [100]-oriented GaAs substrates under in-situ monitoring of specular beam intensity oscillation in reflection high energy electron diffraction(RHEED). Photoluminescence (FL) at 4.2 K revealed sharp and intense emission from single QWs, which is attributed to n = I heavy-hole free exciton. The photopumped lasing of a double heterostructure was achieved at room temper-ature with low threshold excitation intensity (110 kW/cm2), suggesting formation of well-defined heterostructures andpromising potential of GSMBE for device applications. 1. INTRODUCTION The ZnMgSSe alloys are promising not only for blue/green light emitters1 but also for other optoelectronic applies.-tions utilizing quasi-two dimentional (2D) nature of excitons and for an insulating layer of metal-insulator-semiconductor