Growth of the Bi 2O 3 thin films under atmospheric pressure by means of halide CVD

Abstract

Films of Bi 2O 3 were grown on glass substrate under atmospheric pressure by means of halide chemical vapour deposition (AP-HCVD) using BiI 3 and O 2 as the starting materials. In the XRD diffractogram of the film a strong diffraction peak appears at 27.91° assigned to the (111) diffraction of the δ-Bi 2O 3 with cubic structure. X-ray pole figure suggested that the 〈111〉 direction of the film is perpendicular to the substrate surface, while the 〈110〉 axis directs towards all directions parallel to the substrate surface. It is for the first that δ-Bi 2O 3 film was prepared on glass substrate.