Abstract
Si O x nanowire bunches were fabricated on Ni(NO3)2*6H2O solution-coated Si(111) substrates in a chemical vapor deposition system in the presence of Ga and under the flow of Ar and NH3 gases. The roles of nickel nitrate hydrate, gallium, and ammonia in the formation of SiOx nanowire bunches were investigated. It was found that Ni and Ga act as catalysts for the growth, while nickel nitrate hydrate also serves as a source of oxygen. The growth mechanisms of different nanowire structures obtained by varying the fabrication conditions are discussed.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call