Optimization of a thermal-CVD system for carbon nanotube growth

Abstract

We illustrate the optimization of the operation of a thermal chemical vapor deposition (CVD) system for the growth of carbon nanotubes (CNT). We have studied the deposition parameters using the Taguchi matrix robust design approach. The CVD system, which employs solid precursors (camphor and ferrocene) carried by nitrogen gas flow through a hot deposition zone, where the deposition of carbon nanostructures takes place, involves a large number of tunable parameters that have to be optimized. With the aim of getting the best configuration for the development of massive and well-oriented CNT carpets, the Taguchi method allowed us to improve our system leading to the growth of extremely long CNTs (few millimeters) at a high deposition rate (500 nm/s) and yield (30% in weight of the carbon precursors feedstock), which were characterized by electron microscopy. We found that the growth temperature had the most important influence on the CNT diameter, whereas the substrate tilt wit respect to gas flow did not influence their growth (i.e. CNTs grow on every side of the silicon wafer substrates, always normal to the substrate surface). The carrier gas flow and catalyst concentration both showed a secondary impact on CNT growth, though they showed a consistent correlation to the growth temperature.