Abstract

Single-phase PrBa0.7Sr1.3Cu3O7 thin films with the Sr dopant concentration exceeding the solid solubility limit were epitaxially grown on (001) SrTiO3 and (001) LaAlO3 substrates by pulsed laser deposition (PLD) method. The resistivity of the doped films grown on LaAlO3 was significantly lower than that of PrBa2Cu3O7. For most of the films grown on SrTiO3, the resistivity was higher than that of PrBa2Cu3O7. The results were explained by considering the Sr-doping effect and lattice-mismatch-induced strain effect. This work shows the potential of PLD to grow single-phase films with the dopant concentration exceeding the solid solubility limit.

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