Abstract
Epitaxial SrF2 layers were grown onto GaAs (001) at T>250 °C by molecular beam epitaxy. The dominant growth mechanism appears to be by three-dimensional island growth although significant ordering of the surface occurs on annealing the layers at T>400 °C. Growth of epitaxial GaAs (001) at 540 °C by molecular beam epitaxy onto the SrF2 films has also been demonstrated. The results suggest that stacked, single crystal, alternating layers of GaAs (001) and SrF2 (001) should be amenable to growth by molecular beam epitaxy.
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