Abstract
ABSTRACTNucleation and growth of GaAs fIlms deposited by Molecular Beam Epitaxy upon Si(l00) substrates are studied by transmission electron microscopy. The initial nucleation of GaAs consists of approximately hemispherical islands associated with steps upon the substratesurface and coherently strained to the substrate lattice. As the island size increases, crystalline defects relax the strain between epilayer and substrate. Island coalescence is a secondary defect generation mechanism. Subsequent growth of the epitaxial GaAs layer reveals a progressive deterioration of the GaAs/Si interface planarity and the growth and eventual dissolution of amorphous or misoriented crystalline regions at the GaAs/Si interface.
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