Abstract
ABSTRACTUniform, single crystal Si/NiSi2/Si(100) and Si/CoSi2/Si(100) structures were fabricated by molecular beam epitaxy and furnace annealing. A Si template technique and a post-growth anneal at ∼960°C led to high quality buried NiSi2 layers with thickness ∼1000Å. The conditions for fabricating high quality buried CoSi2 layers by the recently proposed allotaxy process were studied and discussed. The endotaxial growth of buried CoSi2 layers in Si(100) was also studied.
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