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Abstract
Vertical p-type gallium arsenide (GaAs) nanowires with pure zinc blende structure were grown on GaAs (111)B substrate by metal-organic chemical vapor deposition via a Au-catalyst vapor-liquid-solid mechanism. The p-type doping was investigated by additional diethyl zinc (DEZn). In the high II/III ratio range (II/III>9.1%), there exists a critical length beyond which kinking takes place. Two possible reasons are discussed. Zn occurrence in the nanowires was verified by energy dispersive X-ray (EDX) analysis. Corresponding to II/III = 0.2%, the doping concentrations about 8 × 1018 cm−3.
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