Abstract

Vertical p-type Gallium arsenide (GaAs) nanowires with pure zinc blende structure were grown on GaAs (111) B substrate by metal-organic chemical vapor deposition via Au-catalyst vapor-liquid-solid mechanism. The p-type doping was investigated by additional diethyl zinc (DEZn). In high II/III ratio range (II/II>9.1%), there exists a critical length, beyond which the kinking takes place. Two possible reasons were discussed.Zn occurrence into the nanowires was verified by energy dispersive X-ray (EDX) analysis. Corresponding to II/III=0.2%, the doping concentration is about 8×1018.

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