Abstract

Growth and characterization of GaAs/AlGaAs core-shell nanowires (NWs) are reported. Using the VLS (vapor-liquid-solid) mechanism, GaAs NWs oriented perpendicularly to the substrate were grown on GaAs (111) B substrate. Using the metalorganic chemical vapor deposition (MOCVD) growth mode, AlGaAs shells were grown on GaAs NWs sidewalls. Single crystal and pure zinc-blende structure are achieved for GaAs NWs. It is founded that the zinc-blende phase is also the dominant phase for GaAs/AlGaAs core-shell NWs with some defects. This study on GaAs/AlGaAs core-shell NWs has many potential applications for nano-electronic and nano-optoelectronic devices.

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