Growth of pseudomorphic Si 1− yC y and Si 1− x− yGe xC y alloy layers on < 100 > Si by ion implantation and pulsed excimer laser induced epitaxy

Abstract

In this work, Si 1− y C y and Si 1− x− y Ge x C y alloy layers were grown by multiple energy ion implantation of Ge and C into single crystal Si followed by pulsed excimer laser induced epitaxy. The properties of the alloy layers obtained by this technique, in terms of film crystallinity, Ge and C redistribution and substitutional incorporation, strain formation or relaxation and C-induced band-gap modification, were demonstrated to depend strongly on both ion implantation and laser processing conditions. The growing of pseudomorphic epitaxial layers from group IV semiconductor alloys was successfully achieved by using the high energy and large area beam (up to 1 J cm −2 per pulse over 40 cm 2) excimer laser developed by SOPRA for industrial applications.