<title>Growth of Si1-yCy/Si and Si1-x-yGexCy/Si heterostructures by ion implantation and pulsed excimer laser-induced epitaxy</title>

Abstract

ABSTRACTIn this work, Sii,C, and Si1. GeC alloy layers were grown by multiple energy ion implantation of Ge and C into single crystal Si followed by pulsed' excimer laser induced epitaxy. The properties of the alloy layers obtained by thistechnique, in terms of film crystallinity, Ge and C redistribution and substitutional incorporation, strain formation and relaxation, SiC precipitation, were demonstrated to depend strongly both on ion implantation and laser processing conditions. The growing of pseudomorphic epitaxial layers, from group IV semiconductor alloys, using the very high energyand large area beam (up to 1 J/cm2 per pulse over 40 cm2) excimer laser developed by SOPRA, for mass production isreported for the first time.Keywords : laser, excimer, implantation, silicon, germanium, carbon, solubility, strain, epitaxy, heterostructure. 1. INTRODUCTION Semiconductor alloys from group IV elements present a strong scientific and technological interest to build novelheterostructures and band-gap engineered devices compatible with current Si technologies.The first alloy extensively studied was the SiiGe system for applications in the field of optoelectronics and highspeed heterojunction bipolar transistors. 1,2 More