Growth of polycrystalline InN on silica glass by ECR‐MBE

Abstract

InN films are grown on amorphous silica glass by electron cyclotron resonance plasma-excited molecular beam epitaxy. InN films grown directly on the substrate without a buffer layer are polycrystalline with no preferred growth orientation and a three-dimensional grainy morphology, whereas films grown on a low-temperature InN buffer layer are polycrystalline with uniform c-axis orientation and random a-axis orientation. Substrate nitridation prior to the growth is found to improve the surface morphology and uniformity of c-axis orientation, similar to the case for poly-GaN growth on silica glass. Notably, this poly-InN on silica glass exhibited room-temperature photoluminescence emission at ∼0.75 eV, with an optical absorption edge at almost the same position as the emission peak. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)