Abstract
Thin films of manganese oxide are made by the ALD (atomic layer deposition) technique using Mn(thd) 3 (Hthd=2,2,6,6-tetramethylheptan-3,5-dione) and ozone as precursors. Pulse parameters for ALD-type growth are established and such growth can be achieved at deposition temperatures between 138 and 210 °C. Films have been deposited on both soda-lime glass and Si(100) single crystals. The electrical resistivities of as-deposited films grown on soda-lime glass are measured to be 0.3–3.2 Ω cm (linear four-point-probe measurements).
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