Growth of low-resistivity high-quality ZnSe, ZnS films by low-pressure metalorganic chemical vapour deposition

Abstract

Growth of low-resistivity and high-quality ZnSe and ZnS films by low-pressure MOCVD has been examined. It has been shown that ZnSe films having electron mobilities as high as 3650 and 1130 cm 2/V·s at 77 K for 3 and 1 μm thick films, respectively, can be obtained. The shallow donor concentration in these films is about 10 15-10 16 cm -3 and the electron-trap deep-center concentration is less than the shallow donor concentration by a factor of 100. Furthermore, it has been shown for the first time that low-resistivity ZnS films can be grown on GaAs by MOCVD.