Abstract
We report on comparative studies of basic properties of indium nitride quantum dots (QDs) grown by metal organic vapour phase epitaxy (MOVPE) on GaN, AlN and Si(111). Variation of the growth parameters, such as the growth temperature, deposition time, and the V/III ratio, allowed us to control characteristic sizes and a density of the QDs. With similar growth parameters, both mean height and aspect ratio of the dots are increased in a GaN, AlN, Si line. The InN QDs have been encapsulated by different materials that permit us to investigate their optical response with optical excitation, whose origin, either luminescent or scattered, is discussed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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