Abstract
AbstractDroplet epitaxy (DE) of InN quantum dots (QDs) on GaN templates using radio frequency plasma‐assisted MBE system has been reported. Two different methods of DE technique, by varying the nitridation and annealing sequence, have been employed. The various growth parameters were systematically optimized to grow non‐coalesced InN QDs without any uncrystallized In droplets. Dimensions of the QDs grown by employing the sequence of prolonged nitridation at the droplet formation temperature itself followed by annealing were found to be comparatively smaller. The differences in the crystallization of the QDs by the two methods are discussed. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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