Abstract
In this work, we report on the growth of InGaN layers and InGaN/InGaN multi-quantum wells (MQWs) grown by plasma-assisted molecular beam epitaxy (PAMBE). We show that the incorporation of indium in InGaN layers can be controlled either by the ratio of Ga to N flux or the growth temperature. A method to increase the internal quantum efficiency of MQWs emitting green light at 500 nm by optimizing the growth temperature for the In content of each individual layer is proposed.
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