Abstract
In this work we study the growth mechanisms of InGaN in plasma-assisted molecular beam epitaxy (PAMBE). We investigate growth of InGaN layers on vicinal GaN (0001) substrates. Indium incorporation as a function of gallium and nitrogen fluxes was examined. We propose microscopic model of InGaN growth by PAMBE postulating different indium adatom incorporation mechanisms on two nonequivalent atomic step edges of wurtzite crystal. The different roles of gallium and nitrogen fluxes during the growth of InGaN layers is discussed.
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