Abstract
Self-assembled InAs quantum dots (QDs) are grown on cross-hatch virtual substrate (VS) consisting of 50-nm In 0.15Ga 0.85As layers on GaAs (0 0 1) prepared by molecular beam epitaxy (MBE). The lattice-mismatched In 0.15Ga 0.85As layer is grown well beyond the critical thickness for misfit dislocation formation in order to form long orthogonal lines (cross hatches) along the [1 1 0] and [ 1 1 ¯ 0 ] directions. By growing InAs layer on top of the cross hatches at a low growth rate of 0.01 monolayer (ML)/s, spontaneous formation of QDs occurs at a thickness of 0.8 ML. We found that reducing the substrate temperature immediately after the QD formation will result in a majority (82%) of QDs aligning on the cross hatches. With a short growth interruption (GI) time of 30 s before reducing the substrate temperature, the QDs form almost exclusively (97%) on the cross hatches and the surface prepared as such is termed QD hatches. Exceeding this optimum GI time, however, results in inhomogeneous, sparsely connected QD hatches, possibly due to In desorption.
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