Abstract
InAs is grown by metalorganic atomic layer epitaxy (MOALE) using dimethylindium chloride (DMInCl) as a new In source material for ALE in a horizontal, low-pressure metalorganic chemical vapor deposition (MOCVD) system. Monolayer-unit growth is obtained over a wide range of growth temperatures from 400 to 475 °C, and of substrate exposure times to DMInCl from 15 to 27 s. With metalorganic chloride source gases, both InAs and GaAs growth are self-limited over a temperature range of 50 °C, from 425 to 475 °C. This is the widest temperature range so far reported. This advantage is applied to ALE growth of (InAs)1(GaAs)5 superlattice.
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