Abstract
We report the growth of In1−xTlxSb, a new III-V alloy for long-wavelength infrared detector applications, by low-pressure metalorganic chemical vapor deposition. In1−xTlxSb with good surface morphology was obtained on both GaAs and InSb substrates at a growth temperature of 455 °C. X-ray diffraction measurements showed resolved peaks of In1−xTlxSb and InSb films. Infrared absorption spectrum of In1−xTlxSb showed a shift toward lower energies compared to InSb spectrum. Hall mobility data on In1−xTlxSb/InSb/GaAs structure showed enhanced mobility at low temperatures compared to InSb/GaAs structure.
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