Abstract
Reproducible growth of InAs x Sb 1− x /InSb strained-layer superlattice photodiodes by low pressure metalorganic chemical vapor deposition (MOCVD) has resulted from the use of Zn doped InAs x Sb 1− x step-graded buffer layers. These photodiodes show improved performance with response to 10 μm and detectivities of 4 × 10 9 cm Hz 1 2 /W at 6 μm. Dislocation formation in InAs x Sb 1− x buffer layers grown on InSb substrates by MOCVD is shown to be reproducibly enhanced by p-type doping at levels exceeding the intrinsic carrier concentration at 475°C using diethylzinc. Carrier concentrations up to 6 × 10 18 cm -3 were obtained. The Zn doped buffer layers have proven to be reproducibly crack free for InAs x Sb 1− x step graded buffer layers with a final composition of x=0.12 lattice matched to a strained layer superlattice (SLS) with an average composition of x=0.09.
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