Growth of highly strained InAs/InP heterostructures by metalorganic chemical vapor deposition using tertiarybutylarsine

Abstract

InAs/InP highly strained quantum well, multiquantum well, and superlattice structures with abrupt interfaces have been grown using tertiarybutylarsine. The diffraction of x-ray wave fields in these heterostructures has been used to examine the structural properties of quantum wells with a thickness of a few monolayers. The high resolution five-crystal x-ray diffraction patterns of single and multiple quantum wells exhibit a modulation of the interferences fringes which strongly depends on the structural parameters of these layers. A computer simulation of the x-ray experimental Bragg diffraction pattern using dynamical theory shows good agreement between the measured and simulated spectra.