Growth of High Quality Ge Layer on Silica Nano-Spheres Integrated Ge/Si Template Using UHV-CVD

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We have investigated the growth of high quality Ge layer on Si substrate using silica nano-spheres (NSs), which behaved as masks to directly block threading dislocations. Two-step growth after the silica NS incorporation into the surface led to a coalesced Ge layer with low threading dislocation density (TDD). TDD in the resultant Ge layer was reduced from 6.4 × 108 to 6.9 × 107 cm−2, and decreased further to 1.4 × 107 cm−2 by post annealing. In addition to the TDD reduction, we speculated that the suppression of {111} facet during the growth restricted significantly the generation of planar defects.